| Autor: |
Hyunjin, Ji, Hojoon, Yi, Sakong, Wonkil, Hyun, Kim, Seong Chu, Lim |
| Rok vydání: |
2019 |
| Zdroj: |
Nanotechnology. 30(34) |
| ISSN: |
1361-6528 |
| Popis: |
Compared to the silicon device whose performance is severely degraded due to the pin-holes and channel inactive space when the channel thickness is less than 1 nm, despite monolayer transition-metal dichalcogenides being the most stable structure to be used as a two-dimensional semiconductor material, precise analysis of the double-gate (DG) field-effect transistor (FET) device structure has hardly been performed thus far. Hence, we analyzed the device operation characteristics of single-gate and DG sweeps in a monolayer MoS |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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