| Autor: |
Asha, Rani, Shiqi, Guo, Sergiy, Krylyuk, Kyle, DiCamillo, Ratan, Debnath, Albert V, Davydov, Mona E, Zaghloul |
| Rok vydání: |
2020 |
| Předmět: |
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| Zdroj: |
IEEE Trans Electron Devices |
| ISSN: |
0018-9383 |
| Popis: |
Single-crystalline MoSe(2) and MoTe(2) platelets were grown by Chemical Vapor Transport (CVT), followed by exfoliation, device fabrication, optical and electrical characterization. We observed that for the field-effect-transistor (FET) channel thickness in range of 5.5 nm to 8.5 nm, MoTe(2) shows p-type, whereas MoSe(2) with channel thickness range of 1.6 nm to 10.5 nm, shows n-type conductivity behavior. At room temperature, both MoSe(2) and MoTe(2) FETs have high ON/OFF current ratio and low contact resistance. Controlling charge carrier type and mobility in MoSe(2) and MoTe(2) layers can pave a way for utilizing these materials for heterojunction nanoelctronic devices with superior performance. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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