| Autor: |
Sangyeon, Pak, Jiwon, Son, Taehun, Kim, Jungmoon, Lim, John, Hong, Younhee, Lim, Chul-Joon, Heo, Kyung-Bae, Park, Yong Wang, Jin, Kyung-Ho, Park, Yuljae, Cho, SeungNam, Cha |
| Rok vydání: |
2022 |
| Zdroj: |
Nanotechnology. 34(1) |
| ISSN: |
1361-6528 |
| Popis: |
Electronic devices composed of semiconducting two-dimensional (2D) materials and ultrathin 2D metallic electrode materials, accompanying synergistic interactions and extraordinary properties, are becoming highly promising for future flexible and transparent electronic and optoelectronic device applications. Unlike devices with bulk metal electrode and 2D channel materials, devices with ultrathin 2D electrode and 2D channel are susceptible to chemical reactions in both channel and electrode surface due to the high surface to volume ratio of the 2D structures. However, so far, the effect of doping was primary concerned on the channel component, and there is lack of understanding in terms of how to modulate electrical properties of devices by engineering electrical properties of both the metallic electrode and the semiconducting channel. Here, we propose the novel, one-pot doping of the field-effect transistor (FET) based on 2D molybdenum disulfide (MoS |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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