Chemical Etching of Silicon Assisted by Graphene Oxide in an HF-HNO

Autor: Wataru, Kubota, Toru, Utsunomiya, Takashi, Ichii, Hiroyuki, Sugimura
Rok vydání: 2021
Zdroj: Langmuir : the ACS journal of surfaces and colloids.
ISSN: 1520-5827
Popis: Chemical etching of silicon assisted by various types of carbon materials is drawing much attention for the fabrication of silicon micro/nanostructures. We developed a method of chemical etching of silicon that utilizes graphene oxide (GO) sheets to promote the etching reaction in a hydrofluoric acid-nitric acid (HF-HNO
Databáze: OpenAIRE