Memristor with a ferroelectric HfO

Autor: V, Mikheev, A, Chouprik, Yu, Lebedinskii, S, Zarubin, A M, Markeev, A V, Zenkevich, D, Negrov
Rok vydání: 2020
Zdroj: Nanotechnology. 31(21)
ISSN: 1361-6528
Popis: New interest in the implementation of ferroelectric tunnel junctions has emerged following the discovery of ferroelectric properties in HfO
Databáze: OpenAIRE