| Autor: |
Xin, Zhou, Srisaran, Venkatachalam, Ronghua, Zhou, Hao, Xu, Alok, Pokharel, Andrew, Fefferman, Mohammed, Zaknoune, Eddy, Collin |
| Rok vydání: |
2021 |
| Zdroj: |
Nano letters. 21(13) |
| ISSN: |
1530-6992 |
| Popis: |
Silicon nitride (SiN) mechanical resonators with high quality mechanical properties are attractive for fundamental research and applications. However, it is challenging to maintain these mechanical properties while achieving strong coupling to an electrical circuit for efficient on-chip integration. Here, we present a SiN drum resonator covered with an aluminum thin film, enabling large capacitive coupling to a suspended top-gate. Implementing the full electrical measurement scheme, we demonstrate a high quality factor ∼10 |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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