| Autor: |
Lee Kheng, Tan, Bo, Liu, Jing Hua, Teng, Shifeng, Guo, Hong Yee, Low, Hui Ru, Tan, Christy Yuen Tung, Chong, Ren Bin, Yang, Kian Ping, Loh |
| Rok vydání: |
2014 |
| Zdroj: |
Nanoscale. 6(18) |
| ISSN: |
2040-3372 |
| Popis: |
A mono- to multilayer thick MoS₂ film has been grown by using the atomic layer deposition (ALD) technique at 300 °C on a sapphire wafer. ALD provides precise control of the MoS₂ film thickness due to pulsed introduction of the reactants and self-limiting reactions of MoCl₅ and H₂S. A post-deposition annealing of the ALD-deposited monolayer film improves the crystallinity of the film, which is evident from the presence of triangle-shaped crystals that exhibit strong photoluminescence in the visible range. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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