| Autor: |
Seung Cheol, Han, Jae-Kwan, Kim, Jun Young, Kim, Dong Min, Lee, Jae-Sik, Yoon, Jong-Kyu, Kim, E F, Schubert, Ji-Myon, Lee |
| Rok vydání: |
2013 |
| Zdroj: |
Journal of nanoscience and nanotechnology. 13(8) |
| ISSN: |
1533-4880 |
| Popis: |
The electrical properties of Ni-based ohmic contacts to N-face p-type GaN were investigated. The specific contact resistance of N-face p-GaN exhibits a linear decrease from 1.01 omega cm2 to 9.05 x 10(-3) omega cm2 for the as-deposited and the annealed Ni/Au contacts, respectively, with increasing annealing temperature. However, the specific contact resistance could be decreased down to 1.03 x 10(-4) omega cm2 by means of surface treatment using an alcohol-based (NH4)2S solution. The depth profile data measured from the intensity of O1s peak in the X-ray photoemission spectra showed that the alcohol-based (NH4)2S treatment was effective in removing the surface oxide layer of GaN. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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