| Autor: |
Yangyang, Chen, Wenyu, Xing, Xirui, Wang, Bowen, Shen, Wei, Yuan, Tang, Su, Yang, Ma, Yunyan, Yao, Jiangnan, Zhong, Yu, Yun, X C, Xie, Shuang, Jia, Wei, Han |
| Rok vydání: |
2017 |
| Zdroj: |
ACS applied materialsinterfaces. 10(1) |
| ISSN: |
1944-8252 |
| Popis: |
Ionic liquid gating can markedly modulate a material's carrier density so as to induce metallization, superconductivity, and quantum phase transitions. One of the main issues is whether the mechanism of ionic liquid gating is an electrostatic field effect or an electrochemical effect, especially for oxide materials. Recent observation of the suppression of the ionic liquid gate-induced metallization in the presence of oxygen for oxide materials suggests the electrochemical effect. However, in more general scenarios, the role of oxygen in the ionic liquid gating effect is still unclear. Here, we perform ionic liquid gating experiments on a non-oxide material: two-dimensional ferromagnetic Cr |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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