| Autor: |
T, Finke, J, Nürnberg, V, Sichkovskyi, M, Golling, U, Keller, J P, Reithmaier |
| Rok vydání: |
2020 |
| Zdroj: |
Optics express. 28(14) |
| ISSN: |
1094-4087 |
| Popis: |
Quantum-dot-based semiconductor saturable absorber mirrors (SESAMs) with fast response times were developed by molecular beam epitaxy (MBE). Using quantum dots (QDs) in the absorber region of the SESAMs instead of quantum wells, enables additional degrees of freedom in the design, the control of saturation parameters and the recovery dynamics. However, if one wants to integrate such a SESAM element into semiconductor surface emitting lasers such as a mode-locked integrated external-cavity surface-emitting laser (MIXSEL), the saturable absorber layers have to withstand a longer high-temperature growth procedure for the epitaxial formation of distributed Bragg reflectors (DBR). Typically defect related SESAMs will be annealed at those growth temperatures and lose their high-speed performance. Here we present a systematic study on the growth parameters and post-growth annealing of SESAMs based on high-quality In |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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