Surface and interfacial study of atomic layer deposited Al

Autor:	H, Zhu, R, Addou, Q, Wang, Y, Nie, K, Cho, M J, Kim, R M, Wallace
Rok vydání:	2019
Zdroj:	Nanotechnology. 31(5)
ISSN:	1361-6528
Popis:	The atomic layer deposition (ALD) of high-k dielectrics could build an efficient barrier against moisture and O
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=pmid________::7def9f9b7900b3225a4d4fa409d0103d https://pubmed.ncbi.nlm.nih.gov/31618710 Zobrazit plný text záznamu