Autor: |
Mamta, Raturi, Arneet, Kaur, Himanshu, Tyagi, Monika, Bhakar, Jyoti, Saini, Manpreet, Kaur, Abir D, Sarkar, Kiran S, Hazra |
Rok vydání: |
2022 |
Zdroj: |
Nanotechnology. 34(9) |
ISSN: |
1361-6528 |
Popis: |
2D van der Waals heterostructure paves a path towards next generation semiconductor junctions for nanoelectronics devices in the post silicon era. Probing the band alignment at a real condition of such 2D contacts and experimental determination of its junction parameters is necessary to comprehend the charge diffusion and transport through such 2D nano-junctions. Here, we demonstrate the formation of the p-n junction at the MoS |
Databáze: |
OpenAIRE |
Externí odkaz: |
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