| Autor: |
D P, Kumah, M, Dogan, J H, Ngai, D, Qiu, Z, Zhang, D, Su, E D, Specht, S, Ismail-Beigi, C H, Ahn, F J, Walker |
| Rok vydání: |
2015 |
| Zdroj: |
Physical review letters. 116(10) |
| ISSN: |
1079-7114 |
| Popis: |
The strong interaction at an interface between a substrate and thin film leads to epitaxy and provides a means of inducing structural changes in the epitaxial film. These induced material phases often exhibit technologically relevant electronic, magnetic, and functional properties. The 2×1 surface of a Ge(001) substrate applies a unique type of epitaxial constraint on thin films of the perovskite oxide BaTiO_{3} where a change in bonding and symmetry at the interface leads to a non-bulk-like crystal structure of the BaTiO_{3}. While the complex crystal structure is predicted using first-principles theory, it is further shown that the details of the structure are a consequence of hidden phases found in the bulk elastic response of the BaTiO_{3} induced by the symmetry of forces exerted by the germanium substrate. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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