Polycrystalline InGaO Thin-Film Transistors with Coplanar Structure Exhibiting Average Mobility of ≈78 cm
| Autor: | Md Hasnat, Rabbi, Suhui, Lee, Daichi, Sasaki, Emi, Kawashima, Yuki, Tsuruma, Jin, Jang |
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| Rok vydání: | 2022 |
| Zdroj: | Small methods. 6(9) |
| ISSN: | 2366-9608 |
| Popis: | Highly ordered polycrystalline indium gallium oxide (PC-IGO) film is obtained by the crystallization of room temperature sputtered amorphous IGO on a hot plate at 350 °C for 1 h and then annealed for 1 h in an N |
| Databáze: | OpenAIRE |
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