Autor:	Maomao, Liu, Sichen, Wei, Simran, Shahi, Hemendra Nath, Jaiswal, Paolo, Paletti, Sara, Fathipour, Maja, Remškar, Jun, Jiao, Wansik, Hwang, Fei, Yao, Huamin, Li
Rok vydání:	2020
Zdroj:	Nanoscale. 12(33)
ISSN:	2040-3372
Popis:	High contact resistance is one of the primary concerns for electronic device applications of two-dimensional (2D) layered semiconductors. Here, we explore the enhanced carrier transport through metal-semiconductor interfaces in WS
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=pmid________::5a6ac880342d4f11049b2969f817f8bd https://pubmed.ncbi.nlm.nih.gov/32329484 Zobrazit plný text záznamu