A Study on the Etching and Surface Characteristics of SiOC Thin Films After C

Autor: Junmyung, Lee, Yeonsik, Choi, Yunho, Nam, Byung Jun, Lee, Hyun Woo, Lee, Kwang-Ho, Kwon
Rok vydání: 2021
Předmět:
Zdroj: Journal of nanoscience and nanotechnology. 21(10)
ISSN: 1533-4899
Popis: Silicon oxycarbide (SiOC) film was etched using a CF₄/C
Databáze: OpenAIRE