Autor: |
Binh-Minh, Nguyen, Andrey A, Kiselev, Ramsey, Noah, Wei, Yi, Fanming, Qu, Arjan J A, Beukman, Folkert K, de Vries, Jasper, van Veen, Stevan, Nadj-Perge, Leo P, Kouwenhoven, Morten, Kjaergaard, Henri J, Suominen, Fabrizio, Nichele, Charles M, Marcus, Michael J, Manfra, Marko, Sokolich |
Rok vydání: |
2016 |
Zdroj: |
Physical review letters. 117(7) |
ISSN: |
1079-7114 |
Popis: |
A Corbino ring geometry is utilized to analyze edge and bulk conductance of InAs/GaSb quantum well structures. We show that edge conductance exists in the trivial regime of this theoretically predicted topological system with a temperature-insensitive linear resistivity per unit length in the range of 2 kΩ/μm. A resistor network model of the device is developed to decouple the edge conductance from the bulk conductance, providing a quantitative technique to further investigate the nature of this trivial edge conductance, conclusively identified here as being of n type. |
Databáze: |
OpenAIRE |
Externí odkaz: |
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