Annealing-induced precipitate formation behavior in MOVPE-grown GaAs

Autor:	Adam W, Wood, Weixin, Chen, Honghyuk, Kim, Yingxin, Guan, K, Forghani, A, Anand, T F, Kuech, L J, Mawst, S E, Babcock
Rok vydání:	2017
Zdroj:	Nanotechnology. 28(21)
ISSN:	1361-6528
Popis:	The effects of a 45 min anneal at 800 °C on the physical properties and microstructure of a five-period GaAs
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=pmid________::3d75dd1ebf52ee27c5742d31b5e7ce70 https://pubmed.ncbi.nlm.nih.gov/28471752 Zobrazit plný text záznamu