Autor:	Yu, Yan, Jia Cheng, Li, Yu Ting, Chen, Xiang Yu, Wang, Gang Ri, Cai, Hyeon Woo, Park, Ji Hun, Kim, Jin Shi, Zhao, Cheol Seong, Hwang
Rok vydání:	2021
Zdroj:	ACS applied materialsinterfaces. 13(33)
ISSN:	1944-8252
Popis:	In electronic bipolar resistive switching (eBRS), the electron trapping and detrapping at the defect sites within the switching layer, such as the highly defective TiO
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=pmid________::3c913e7ea414cec2a786a1a0b3375c78 https://pubmed.ncbi.nlm.nih.gov/34378371 Zobrazit plný text záznamu