Demonstration of a 1/4-cycle phase shift in the radiation-induced oscillatory magnetoresistance in GaAs/AlGaAs devices

Autor: R G, Mani, J H, Smet, K, von Klitzing, V, Narayanamurti, W B, Johnson, V, Umansky
Rok vydání: 2003
Zdroj: Physical review letters. 92(14)
ISSN: 0031-9007
Popis: We examine the phase and the period of the radiation-induced oscillatory magnetoresistance in GaAs/AlGaAs devices utilizing in situ magnetic field calibration by electron spin resonance of diphenyl-picryl-hydrazal. The results confirm a f-independent 1/4-cycle phase shift with respect to the hf=j variant Planck's over 2pi omega(c) condition for j/=1, and they also suggest a small ( approximately 2%) reduction in the effective mass ratio, m(*)/m, with respect to the standard value for GaAs/AlGaAs devices.
Databáze: OpenAIRE