Single-crystal field-effect transistors of new Cl₂-NDI polymorph processed by sublimation in air

Autor: Tao, He, Matthias, Stolte, Christian, Burschka, Nis Hauke, Hansen, Thomas, Musiol, Daniel, Kälblein, Jens, Pflaum, Xutang, Tao, Jochen, Brill, Frank, Würthner
Rok vydání: 2014
Zdroj: Nature communications. 6
ISSN: 2041-1723
Popis: Physical properties of active materials built up from small molecules are dictated by their molecular packing in the solid state. Here we demonstrate for the first time the growth of n-channel single-crystal field-effect transistors and organic thin-film transistors by sublimation of 2,6-dichloro-naphthalene diimide in air. Under these conditions, a new polymorph with two-dimensional brick-wall packing mode (β-phase) is obtained that is distinguished from the previously reported herringbone packing motif obtained from solution (α-phase). We are able to fabricate single-crystal field-effect transistors with electron mobilities in air of up to 8.6 cm(2) V(-1) s(-1) (α-phase) and up to 3.5 cm(2) V(-1) s(-1) (β-phase) on n-octadecyltriethoxysilane-modified substrates. On silicon dioxide, thin-film devices based on β-phase can be manufactured in air giving rise to electron mobilities of 0.37 cm(2) V(-1) s(-1). The simple crystal and thin-film growth procedures by sublimation under ambient conditions avoid elaborate substrate modifications and costly vacuum equipment-based fabrication steps.
Databáze: OpenAIRE