Anisotropic Carrier Mobility from 2H WSe

Autor: Ping, Chen, Jinbo, Pan, Wenchao, Gao, Bensong, Wan, Xianghua, Kong, Yang, Cheng, Kaihui, Liu, Shixuan, Du, Wei, Ji, Caofeng, Pan, Zhong Lin, Wang
Rok vydání: 2021
Zdroj: Advanced materials (Deerfield Beach, Fla.). 34(7)
ISSN: 1521-4095
Popis: Transition metal dichalcogenides (TMDCs) with 2H phase are expected to be building blocks in next-generation electronics; however, they suffer from electrical anisotropy, which is the basics for multi-terminal artificial synaptic devices, digital inverters, and anisotropic memtransistors, which are highly desired in neuromorphic computing. Herein, the anisotropic carrier mobility from 2H WSe
Databáze: OpenAIRE