| Autor: |
Ji-Hong, Kim, Pragya R, Shrestha, Jason P, Campbell, Jason T, Ryan, David, Nminibapiel, Joseph J, Kopanski, Kin P, Cheung |
| Rok vydání: |
2017 |
| Předmět: |
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| Zdroj: |
IEEE transactions on electron devices. 63(10) |
| ISSN: |
0018-9383 |
| Popis: |
We report a new technique for the rapid measurement of full capacitance-voltage (C-V) characteristic curves. The displacement current from a 100 MHz applied sine-wave, which swings from accumulation to strong inversion, is digitized directly using an oscilloscope from the metal-oxide-semiconductor (MOS) capacitor under test. A C-V curve can be constructed directly from this data but is severely distorted due to non-ideal behavior of real measurement systems. The key advance of this work is to extract the system response function using the same measurement set-up and a known MOS capacitor. The system response correction to the measured C-V curve of the unknown MOS capacitor can then be done by simple deconvolution. No de-skewing and/or leakage current correction is necessary, making it a very simple and quick measurement. Excellent agreement between the new fast C-V method and C-V measured conventionally by an LCR meter is achieved. The total time required for measurement and analysis is approximately 2 seconds, which is limited by our equipment. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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