| Autor: |
Akhil, Sharma, Marcel A, Verheijen, Longfei, Wu, Saurabh, Karwal, Vincent, Vandalon, Harm C M, Knoops, Ravi S, Sundaram, Jan P, Hofmann, W M M Erwin, Kessels, Ageeth A, Bol |
| Rok vydání: |
2018 |
| Zdroj: |
Nanoscale. 10(18) |
| ISSN: |
2040-3372 |
| Popis: |
Low-temperature controllable synthesis of monolayer-to-multilayer thick MoS2 with tuneable morphology is demonstrated by using plasma enhanced atomic layer deposition (PEALD). The characteristic self-limiting ALD growth with a growth-per-cycle of 0.1 nm per cycle and digital thickness control down to a monolayer are observed with excellent wafer scale uniformity. The as-deposited films are found to be polycrystalline in nature showing the signature Raman and photoluminescence signals for the mono-to-few layered regime. Furthermore, a transformation in film morphology from in-plane to out-of-plane orientation of the 2-dimensional layers as a function of growth temperature is observed. An extensive study based on high-resolution transmission electron microscopy is presented to unravel the nucleation mechanism of MoS2 on SiO2/Si substrates at 450 °C. In addition, a model elucidating the film morphology transformation (at 450 °C) is hypothesized. Finally, the out-of-plane oriented films are demonstrated to outperform the in-plane oriented films in the hydrogen evolution reaction for water splitting applications. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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