Obtaining a Low and Wide Atomic Layer Deposition Window (150-275 °C) for In

Autor: Sang Bok, Kim, Ashwin, Jayaraman, Danny, Chua, Luke M, Davis, Shao-Liang, Zheng, Xizhu, Zhao, Sunghwan, Lee, Roy G, Gordon
Rok vydání: 2018
Zdroj: Chemistry (Weinheim an der Bergstrasse, Germany). 24(38)
ISSN: 1521-3765
Popis: Indium oxide is a major component of many technologically important thin films, most notably the transparent conductor indium tin oxide (ITO). Despite being pyrophoric, homoleptic indium(III) alkyls do not allow atomic layer deposition (ALD) of In
Databáze: OpenAIRE
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