Hysteretic temperature dependence of resistance controlled by gate voltage in LaAlO

Autor:	Yongsu, Kwak, Woojoo, Han, Joon Sung, Lee, Jonghyun, Song, Jinhee, Kim
Rok vydání:	2021
Zdroj:	Scientific reports. 12(1)
ISSN:	2045-2322
Popis:	For two-dimensional electron gas device applications, it is important to understand how electrical-transport properties are controlled by gate voltage. Here, we report gate voltage-controllable hysteresis in the resistance-temperature characteristics of two-dimensional electron gas at LaAlO
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=pmid________::1e408c9d7458b586b5af2b938a3ad20d https://pubmed.ncbi.nlm.nih.gov/35440752 Zobrazit plný text záznamu Full text from SpringerLink