Inducing a Lifshitz transition by extrinsic doping of surface bands in the topological crystalline insulator Pb1-xSnxSe

Autor: I, Pletikosić, G D, Gu, T, Valla
Rok vydání: 2014
Zdroj: Physical review letters. 112(14)
ISSN: 1079-7114
Popis: The narrow gap semiconductor Pb1-xSnxSe was investigated for topologically protected surface states in its rocksalt structural phase for x=0.45, 0.23, 0.15, and 0. Angle-resolved photoelectron spectroscopy of intrinsically p-doped samples showed a clear indication of two Dirac cones, eccentric about the time-reversal invariant point X¯ of the surface Brillouin zone for all but the x=0 sample. Adsorption of alkalies gradually filled the surface bands with electrons, driving the x0 topological crystalline insulator systems through Lifshitz transitions, and from a holelike to electronlike Fermi surface. The electron-doped bands in x0 samples exhibited the full configuration of the Dirac cones, also confirming electron-hole symmetry of the surface bands.
Databáze: OpenAIRE