| Autor: |
Jiacheng, Sun, Yuyan, Wang, Shaoqiang, Guo, Bensong, Wan, Lianqing, Dong, Youdi, Gu, Cheng, Song, Caofeng, Pan, Qinghua, Zhang, Lin, Gu, Feng, Pan, Junying, Zhang |
| Rok vydání: |
2019 |
| Zdroj: |
Advanced materials (Deerfield Beach, Fla.). 32(9) |
| ISSN: |
1521-4095 |
| Popis: |
As unique building blocks for next-generation optoelectronics, high-quality 2D p-n junctions based on semiconducting transition metal dichalcogenides (TMDs) have attracted wide interest, which are urgent to be exploited. Herein, a novel and facile electron doping of WSe |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
|
Plný text