| Autor: |
Aleksandra A, Koroleva, Anna G, Chernikova, Anastasia A, Chouprik, Evgeny S, Gornev, Aleksandr S, Slavich, Roman R, Khakimov, Evgeny V, Korostylev, Cheol Seong, Hwang, Andrey M, Markeev |
| Rok vydání: |
2020 |
| Zdroj: |
ACS applied materialsinterfaces. 12(49) |
| ISSN: |
1944-8252 |
| Popis: |
Resistive switching (RS) device behavior is highly dependent on both insulator and electrode material properties. In particular, the bottom electrode (BE) surface morphology can strongly affect RS characteristics. In this work, Ru films with different thicknesses grown on a TiN layer by radical-enhanced atomic layer deposition (REALD) are used as an inert BE in TaO |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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