| Autor: |
M V, Dorokhin, O V, Vikhrova, P B, Demina, I L, Kalentyeva, P S, Vergeles, E B, Yakimov, V P, Lesnikov, B N, Zvonkov, M V, Ved, Yu A, Danilov, A V, Zdoroveyshchev |
| Rok vydání: |
2021 |
| Zdroj: |
Applied radiation and isotopes : including data, instrumentation and methods for use in agriculture, industry and medicine. 179 |
| ISSN: |
1872-9800 |
| Popis: |
The GaAs semiconductor structures for the application as betavoltaic power sources were investigated. Three types of structures underwent a comparative study: a Schottky diode, a p-n junction and Schottky structure modified by deposition of a carbon layer. The power characteristics were estimated by Monte-Carlo simulation and collected current calculation using parameters obtained from the electron beam induced current technique. It was shown that carbon deposition on the top of n-GaAs allows passivating the surface states and thus improving betavoltaic performance. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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