| Autor: |
McElhinney, M., Vogele, B., Holland, M. C., Stanley, C. R., Skuras, E., Long, A. R., Johnson, E. A. |
| Jazyk: |
angličtina |
| Rok vydání: |
1996 |
| Předmět: |
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| Popis: |
Magnetotransport measurements are reported for In0.53Ga0.47As layers grown by molecular beam epitaxy (MBE) at different substrate temperatures (T-s) and either delta or slab-doped with Si. Multiple subband densities deduced from the Fourier analysis of 1.2 K Shubnikov-de Haas measurements are compared with those derived from self-consistent calculations which include nonparabolicity and the doping profile width w(Si) as a fitting parameter. Significant spreading of the Si donors away from the doping plane is deduced for deposition at T-s approximate to 520 degrees C, while no measurable migration is inferred for T-s less than or equal to 470 degrees C, leading to near-ideal delta-doping behavior. Contrary to previous results [McElhinney et al., J. Cryst. Growth 150, 266 (1995)], no evidence for amphoteric behavior has been found for Si areal densities up to 4 X 10(12) cm(-2). (C) 1996 American Institute of Physics. Applied Physics Letters |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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