| Autor: |
Qasrawi, Atef Fayez, Khanfar, Hazem K. |
| Přispěvatelé: |
İstinye Üniversitesi, Mühendislik ve Doğa Bilimleri Fakültesi, Elektrik-Elektronik Mühendisliği Bölümü, Atef Fayez Qasrawi / 0000-0001-8193-6975, Qasrawi, Atef Fayez, Atef Fayez Qasrawi / R-4409-2019, Atef Fayez Qasrawi / 6603962677 |
| Jazyk: |
angličtina |
| Rok vydání: |
2023 |
| Předmět: |
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| Popis: |
Herein voltage and frequency controlled thin film transistors fabricated by depositing SeO2 onto germanium thin crystals are reported. For these devices measurements of the current-voltage characteristics revealed a biasing dependent rectification ratios. The devices showed metal-oxide-semiconductor character under reverse biasing conditions. In addition, the biasing dependent capacitance and conductance spectral studies in the frequency domain of 20M-1000MHz has shown the possibility of switching the capacitance and negative conductance from negative mode to positive mode. The features of the Ge/SeO2 devices make them attractive for use in electronic circuits as parasitic capacitive circuit elements, noise reducers, signal amplifiers and microwave oscillators. WOS:000954282900001 Q4 |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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