| Autor: |
Bürger, D., Zhou, S., Höwler, M., Ou, X., Kovacs, G. J., Reuther, H., Mücklich, A., Skorupa, W., Helm, M., Schmidt, H. |
| Jazyk: |
angličtina |
| Rok vydání: |
2012 |
| Předmět: |
|
| Zdroj: |
E-MRS 2012 Fall Meeting, 17.-21.09.2012, Warschau, Polen |
| Popis: |
The coupling of the magnetization state with the electrical transport properties of a magnetic semiconductor is one big step to new spintronics devices. The coupling can be proved by SQUID magnetization and Hall resistance measurements. In a previous work we fabricated ferromagnetic Ge:Mn by Mn ion implantation and pulsed laser annealing (PLA) and observed a clear hysteretic Hall resistance correlated with the magnetization below 10 K [1]. Recently, by applying optimized PLA conditions, we fabricated a percolating, Mn-rich Ge:Mn nanonet with hysteretic Hall resistance up to 30 K [2]. This nanonet is embedded in crystalline Ge:Mn between 5 nm and 40 nm under the sample surface. The reason for the formation of the nanonet is a constitutional undercooling of the liquid Ge-Mn-alloy during the recrystallization process using a relatively long pulse length of 300 ns which helped to imprint an optimal temperature profile during PLA [3]. We applied etching to confirm the contribution of the nanonet to the electrical transport properties. In the future such nanonets may be used to spin-polarize free charge carriers in magnetic semiconductors at room temperature. Because the nanonet can be selectively etched, substrates with ordered “nano-channels” can be fabricated which may be also useful in the field of nanoimprint-lithography. [1] S. Zhou et al., Phys. Rev. B 81, 165204 (2010) [2] D. Bürger et al., Appl. Phys. Lett. 100, 012406 (2012) [3] J. Narayan, J. Appl. Phys. 52, 1289 (1981) |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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