| Autor: |
Regensburger, S., Mukherjee, A. K., Schönhuber, S., Kainz, M. A., Winnerl, S., Klopf, J. M., Lu, H., Gossard, A. C., Unterrainer, K., Preu, S. |
| Jazyk: |
angličtina |
| Rok vydání: |
2018 |
| Předmět: |
|
| Zdroj: |
IEEE Transactions on Terahertz Science and Technology 8(2018), 465-471 |
| Popis: |
We demonstrate UV contact lithographically fabricated III–V field-effect transistors (FETs) examined over a bandwidth of 100 GHz–11.8 THz. The zero-bias device reaches a noise equivalent power as low as 250 pW/√Hz at 0.6 THz, which then increases as f^4 at higher frequencies. The responsivity is modeled by a simple equivalent circuit, showing good agreement over the frequency range of two decades. The FETs have been characterized using a photomixer, a quantum cascade laser, and a free-electron laser, proving the versatility and large applicability of the detection concept. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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