| Autor: |
Gan, Z., Paradisanos, I., Estrada-Real, A., Picker, J., Najafidehaghani, E., Davies, F., Neumann, C., Robert, C., Wiecha, P., Watanabe, K., Taniguchi, T., Marie, X., Biskupek, J., Mundszinger, M., Leiter, R., Krasheninnikov, A., Urbaszek, B., George, A., Turchanin, A. |
| Jazyk: |
angličtina |
| Rok vydání: |
2022 |
| Předmět: |
|
| Zdroj: |
Advanced Materials 34(2022), 2205226 |
| Popis: |
One-pot chemical vapor deposition (CVD) growth of large-area Janus SeMoS monolayers is reported, with the asymmetric top (Se) and bottom (S) chalcogen atomic planes with respect to the central transition metal (Mo) atoms. The for- mation of these !D semiconductor monolayers takes place upon the thermo- dynamic-equilibrium-driven exchange of the bottom Se atoms of the initially grown MoSe! single crystals on gold foils with S atoms. The growth process is characterized by complementary experimental techniques including Raman and X-ray photoelectron spectroscopy, transmission electron microscopy, and the growth mechanisms are rationalized by first principle calculations. The remark- ably high optical quality of the synthesized Janus monolayers is demonstrated by optical and magneto-optical measurements which reveal the strong exciton– phonon coupling and enable an exciton g-factor of −3.3. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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