Surface magnetization of Cr2O3 (104) quantified via scanning NV magnetometry

Autor: Lehmann, P., Wagner, K., Pylypovskyi, O., Weber, S., Hedrich, N., Makushko, P., Shields, B., Kosub, T., Veremchuk, I., Sheka, D., Spaldin, N., Makarov, D., Maletinsky, P.
Jazyk: angličtina
Rok vydání: 2023
Předmět:
Zdroj: WE-Heraeus-Seminar “Re-thinking Spintronics: From Unconventional Materials to Novel Technologies”, 03.-06.01.2023, Bad Honnef, Germany
Popis: Magneto-electric antiferromagnets are candidate materials for future spintronic devices. While antiferromagnets offer high speed, low power consumption and robustness to external fields, magneto-electrics allow manipulation of the magnetic order parameter not only via magnetic signals, but also via electric signals [1, 2]. Readout and manipulation of the antiferromagnetic order on the nanoscale typically relies on local probes sensitive to the surface magnetization. Therefore, its optimization is key challenge in device engineering. Here we investigate the surface magnetization of an oblique cut of single crystal Cr 2 O3 using scanning probe nitrogen-vacancy center magnetometry. The (104) surface normal is at an angle of 38.5° to the uniaxial anisotropy axis of Cr 2 O3. By magneto-electric annealing [3], a homogeneous antiferromagnetic order is initialized. We then measure the stray magnetic fields produced by topographic steps fabricated by ICP etching. The steps have various angles with respect to the c-axis in-surface component, allowing us to probe different `cuts` of the magnetization. We finally consider a simple model based on a homogenous surface magnetization strength and orientation for the various crystal facets. We find good agreement between this model and the recorded stray fields for a magnetization aligned with the bulk c-axis orientation. The predicted magnitude agrees with previous results of measurements on (001) surfaces [4]. We hope that these findings may aid in understanding the relation between surface and bulk magnetic order in antiferromagnets and aid in the development of antiferromagnetic spintronic devices.
Databáze: OpenAIRE