| Autor: |
Bürger, D., Zhou, S., Höwler, M., Ou, X., Kovacs, G. J., Reuther, H., Mücklich, A., Skorupa, W., Helm, M., Schmidt, H. |
| Jazyk: |
angličtina |
| Rok vydání: |
2012 |
| Předmět: |
|
| Zdroj: |
IFW Winterschool, 15.-18.01.2012, Oberwiesenthal, Deutschland |
| Popis: |
In a previous work [1], we fabricated ferromagnetic Ge:Mn by Mn ion implantation and pulsed laser annealing (PLA) and observed hysteretic Hall resistance below 10 K. By applying different PLA conditions we fabricated a percolating, Mn-rich, amorphous Ge:Mn nano-network with hysteretic Hall resistance up to 30K. This nano-network is embedded in crystalline Ge:Mn between 5 nm and 40 nm under the sample surface. We applied chemical and physical etching to confirm the contribution of the nano-network to the magnetic properties. The nano-network has a significant influence on the correlation between magnetism and anomalous Hall resistance. In the future such nano-networks may be used to spin-polarize free charge carriers in semiconductors at room temperature. [1] S. Zhou et al., Phys. Rev. B 81, 165204 (2010) |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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