High-Bandwidth Photodiodes on Silicon Nitride Supporting Net Bitrates in Excess of 350 Gbit/s
| Autor: | Maes, Dennis, Hu, Qian, Borkowski, Robert, Lefevre, Yannick, Roelkens, Gunther, Lemey, Sam, Peytavit, Emilien, Kuyken, Bart |
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| Přispěvatelé: | Department of Information Technology (INTEC), Universiteit Gent = Ghent University (UGENT), Photonics Research Group, Universiteit Gent = Ghent University (UGENT)-Universiteit Gent = Ghent University (UGENT), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Photonique THz - IEMN (PHOTONIQUE THZ - IEMN), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA) |
| Jazyk: | angličtina |
| Rok vydání: | 2022 |
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| Zdroj: | European Conference on Optical Communication, ECOC 2022 European Conference on Optical Communication, ECOC 2022, Sep 2022, Basel, Switzerland |
| Popis: | International audience; Silicon-nitride-based integrated photonic platforms currently lack fast photodiodes, limiting its adoption for high-speed optical transceivers. We show uni-traveling-carrier (UTC) photodiodes heterogeneously integrated by means of micro-transfer-printing and demonstrate their excellent bandwidth performance at 1550 nm, achieving net bit rates in excess of 350 Gbit/s. |
| Databáze: | OpenAIRE |
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