[Invited] From research to production: how MBE can unlock GaN-on-Si technology
| Autor: | Semond, Fabrice, Rennesson, Stephanie, Tamariz, Sébastian, Carneiro, Elodie, Mehta, Jash, Medjdoub, F |
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| Přispěvatelé: | Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (1965 - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), EasyGaN, WIde baNd gap materials and Devices - IEMN (WIND - IEMN), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), GANEX, Renatech Network, ANR-11-LABX-0014,GANEX,Réseau national sur GaN(2011) |
| Jazyk: | angličtina |
| Rok vydání: | 2022 |
| Předmět: | |
| Zdroj: | The International Conference on Molecular Beam Epitaxy (ICMBE 2022) The International Conference on Molecular Beam Epitaxy (ICMBE 2022), Sep 2022, Sheffield, United Kingdom |
| Popis: | International audience; MBE has several advantages for the epitaxy of GaN-based heterostructures. More specifically, by controlling the interface between the AlN buffer layer and the silicon substrate, ammonia-MBE allows to grow innovative structures on silicon. Epitaxy on silicon necessarily requires a demonstration of scaling-up on large wafers used by the microelectronics industry. Properties of several epitaxial heterostructures grown on 200mm substrate are presented and discussed, emphasizing the originality of these structures and the beneficial contribution of MBE. Also, prospects and future challenges are discussed. |
| Databáze: | OpenAIRE |
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