| Autor: |
BRACCIOLI, MARCO, FIEGNA, CLAUDIO, SANGIORGI, ENRICO, P. Palestri, T. Poiroux, M. Vinet, G. Le Carval, M. Mouis |
| Přispěvatelé: |
YOURI V. PONOMAREV, M. Braccioli, P. Palestri, T. Poiroux, M. Vinet, G. Le Carval, M. Moui, C. Fiegna, E. Sangiorgi |
| Jazyk: |
angličtina |
| Rok vydání: |
2007 |
| Předmět: |
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| Popis: |
Full-band Monte Carlo simulation of short-channel Double-Gate SOI MOSFETs were used to assess possible improvement of drain current in devices featuring conduction-band offsets between the source and the channel, obyained adopting non-conventional materials for the source and drain regions. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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