| Autor: |
U. Roy, BRACCIOLI, MARCO, SANGIORGI, ENRICO, FIEGNA, CLAUDIO |
| Přispěvatelé: |
U. Roy, M. Braccioli, E. Sangiorgi, C. Fiegna |
| Jazyk: |
angličtina |
| Rok vydání: |
2010 |
| Předmět: |
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| Popis: |
We study the impact of self-heating on device characteristics to compare advantages of double-gate silicon on insulator (DGSOI) over bulk technology. Performance comparison of digital circuits like three stage ring oscillator has been made. Impact of self-heating on the performance of oscillator implemented with SOI double gate FETs and bulkFETs has also been investigated. Although self-heating affects the performance of digital circuits for scaled SOI technologies considerably due to poor thermal conductivity of the buried oxide layer, DGSOI circuits retain a significant advantage over bulk counterpart. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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