| Autor: |
SANTARELLI, ALBERTO, NIESSEN, DANIEL, CIGNANI, RAFAEL, GIBIINO, GIAN PIERO, TRAVERSO, PIER ANDREA, FLORIAN, CORRADO, FILICORI, FABIO, Dominique M. M. P. Schreurs |
| Přispěvatelé: |
Alberto Santarelli, Daniel Niessen, Rafael Cignani, Gian Piero Gibiino, Pier Andrea Traverso, Corrado Florian, Dominique M. M.-P. Schreur, Fabio Filicori |
| Jazyk: |
angličtina |
| Rok vydání: |
2014 |
| Předmět: |
|
| Popis: |
A state-space empirical nonlinear model for GaN-based field-effect transistors (FETs) is defined, along with the associated identification procedures based on a recently published double pulse measurement technique. Charge trapping phenomena are dealt with in terms of a nonlinear state equation, which describes the rate of change of the trap state as a function of its actual distance from the corresponding steady state. Model experimental validation is carried out, after on-wafer characterization of a 1-mm AlGaN–GaN on SiC FET, both under strong and mild nonlinear operation. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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