Electro-Thermal Characterization And Compact Modelling of GaN HEMTs for Microwave Applications
| Autor: | SANTARELLI, ALBERTO, CIGNANI, RAFAEL, NIESSEN, DANIEL, FILICORI, FABIO, S. D’Angelo |
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| Přispěvatelé: | A. Santarelli, R. Cignani, D. Niessen, S. D’Angelo, F. Filicori |
| Jazyk: | angličtina |
| Rok vydání: | 2011 |
| Předmět: | |
| Popis: | A new modeling approach has been developed for the accurate prediction of the dynamic drain current of GaN FETs. This is accomplished by separation of the low (LF) and high (HF) frequency transistor dynamic behavior. |
| Databáze: | OpenAIRE |
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