Thermal analysis of nanoscale MOSFETs by 2D electro-thermal simulation

Autor:	Y. Yang, A. G. O'Neill, FIEGNA, CLAUDIO, EMINENTE, SIMONE, SANGIORGI, ENRICO
Přispěvatelé:	YOURI V. PONOMAREV, Y. Yang, C. Fiegna, S. Eminente, A.G. O'Neill, E. Sangiorgi
Jazyk:	angličtina
Rok vydání:	2007
Předmět:	Hardware_GENERAL MOSFETS Hardware_INTEGRATEDCIRCUITS SELF-HEATING DEVICE SIMULATION SILICON ON INSULATOR Hardware_PERFORMANCEANDRELIABILITY HEAT GENERATION AND TRANSPORT GeneralLiterature_REFERENCE(e.g. dictionaries encyclopedias glossaries) Hardware_LOGICDESIGN
Popis:	Extensive thermal analysis of SOI MOSFETs designed according the International Roadmap for Semiconductors.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=od______4094::4e547d6a5bb81ba335c123633f4295d8 http://hdl.handle.net/11585/46093 Zobrazit plný text záznamu