Erratum:Electrical characteristics of InAs self-assembled quantum dots embedded in GaAs using admittance spectroscopy (Journal of Nanophotonics (2012) 6)

Autor:	Sellai, Azzouz, Kruszewski, Piotr, Mesli, Abdelmadjid, Peaker, Anthony R., Missous, Mohamed
Jazyk:	angličtina
Rok vydání:	2012
Předmět:	ResearchInstitutes_Networks_Beacons/photon_science_institute Photon Science Institute
Zdroj:	Sellai, A, Kruszewski, P, Mesli, A, Peaker, A R & Missous, M 2012, ' Erratum : Electrical characteristics of InAs self-assembled quantum dots embedded in GaAs using admittance spectroscopy (Journal of Nanophotonics (2012) 6) ', Journal of Nanophotonics, vol. 6, no. 1, 060103 . https://doi.org/10.1117/1.JNP.6.060103
DOI:	10.1117/1.JNP.6.060103
Databáze:	OpenAIRE
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