Quantum transport through a disordered array of Ge-vacancy defects in silicon for application in quantum technologies

Autor: Achilli, S., N. H., Le, Fratesi, G., Manini, N., Onida, G., Turchetti, M., Ferrari, G., Shinada, T., Tanii, T., Prati, E.
Jazyk: angličtina
Rok vydání: 2021
Databáze: OpenAIRE