Voltage-controlled cycling endurance of HfOx-based resistive-switching memory

Autor:	Balatti, Simone, Ambrogio, Stefano, Wang, Zhongqiang, Sills, Scott, Calderoni, Alessandro, Ramaswamy, Nirmal, Ielmini, Daniele
Jazyk:	angličtina
Rok vydání:	2015
Předmět:	Cycling endurance Device modeling Memory reliability Resistive-switching memory (RRAM) Electrical and Electronic Engineering Electronic Optical and Magnetic Materials Electronic Optical and Magnetic Materials
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=od______3731::afa674fe1642713305fe1e604cfee8af http://hdl.handle.net/11311/984324 Zobrazit plný text záznamu