Improvement of DC, low frequency and reliability properties of InAlAs/InGaAs InP-based HEMTs by means of an InP etch stop layerInternational Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217)

Autor:	Meneghesso, Gaudenzio, Buttari, Dario, Perin, E., Canali, C., Zanoni, Enrico
Jazyk:	angličtina
Rok vydání:	1998
Předmět:	kink Indium Phosphide HEMT
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=od______3657::f7f13811c6a2cb1ba29c4bf7f159c101 http://hdl.handle.net/11577/2519246 Zobrazit plný text záznamu