Process for suppressing the nucleation and/or growth of interstitial type defects by controlling the cooling rate through nucleation
| Autor: | McCallum, Kirk D., Brock, Alexander W., Banan, Mohsen, Falster, Robert J., Holzer, Joseph C., Johnson, Bayard K., Bum Kim, Chang, Kimbel, Steven L., Lu, Zheng, Metti, Paolo, Voronkov, Vladimir V., Mule Stagno, Luciano, Libbert, Jeffrey L. |
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| Jazyk: | angličtina |
| Rok vydání: | 2003 |
| Předmět: | |
| Popis: | The present invention relates to a process for growing a single crystal silicon ingot, which contains an axially symmetric region having a predominant intrinsic point defect and which is substantially free of agglomerated intrinsic point defects in that region. The process comprising cooling the ingot from the temperature of solidification to a temperature of less than 800° C. and, as part of said cooling step, quench cooling a region of the constant diameter portion of the ingot having a predominant intrinsic point defect through the temperature of nucleation for the agglomerated intrinsic point defects for the intrinsic point defects which predominate in the region. N/A |
| Databáze: | OpenAIRE |
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