Engineering the nano and micro structures of sputtered HfZrO2 thin films
| Autor: | Bouaziz, Jordan, Segantini, Greta, Manchon, Benoît, Barhoumi, Rabei, Cañero Infante, Ingrid, Deleruyelle, Damien, Baboux, Nicolas, Rojo Romeo, Pedro, Vilquin, Bertrand |
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| Přispěvatelé: | INL - Electronique (INL - ELEC), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Université de Lyon, INL - Dispositifs Electroniques (INL - DE), INL - Ingénierie et conversion de lumière (i-Lum) (INL - I-Lum), European Project: 780302,EC | H2020 | RIA,3eFERRO(2018), European Project: 958174,M-ERA.NET NanOx4EStor |
| Jazyk: | angličtina |
| Rok vydání: | 2023 |
| Předmět: | |
| Zdroj: | 15th International Meeting on Ferroelectricity-IMF 2023 15th International Meeting on Ferroelectricity-IMF 2023, Mar 2023, Tel Aviv, Israel |
| Popis: | International audience; We focus on (Hf,Zr)O2 thin films deposition for the capacitor of FRAM in the 1T-1C. (Hf,Zr)O2 thin films are studied to either fully understand the stabilization of the ferroelectric phase or to fit with industrial requirements. Changing the pressure in our sputtering chamber during the room temperature deposition lead to the deposition of crystalline or amorphous films. After a Rapid Thermal Annealing, only the amorphous films crystallize in the ferro-phase [1]. Samples are stacks of Si/TiN/Hf0.5Zr0.5O/TiN/Pt. The samples are called NM, and M: NM and M refers to two different architectures, respectively non-mesa and mesa structures [2]. The set-up for electrical measurements have been described in reference [3]. We report the fabrication of two samples deposited by magnetron sputtering with excellent performances, quite similar to samples deposited by ALD. Pr values are among the highest for samples deposited by sputtering. Although the N-sample and NM-samples show very close Pr values, the two samples show completely different electrical behaviors. During cycling, the increase of Pr value for the NM-sample is more than an order of magnitude higher than the M-sample. It is accompanied by a decrease of the endurance which is two order of magnitude higher for the NM-sample than for the M-sample. The origins of the different electrical behaviors come from the micro-crystalline structures of the two samples, according to GIXRD results. The crystallization takes place during the annealing step. It induces different stress states which lead to two different micro-crystalline patterning. The M-sample shows no monoclinic peak, whereas the NM-sample shows many monoclinic orientations. It can explain the huge reduction of the wake-up effect.[1] J. Bouaziz et al. JVST B 37, 021203 (2019).[2] J. Bouaziz et al. ACS Appl. Electron. Mater. 1, 1740 (2019).[3] J. Bouaziz et al. APL Mater. 7, 081109 (2019). |
| Databáze: | OpenAIRE |
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